MJD3055TF
Manufacturer: Rochester Electronics
Description: NPN EPITAXIAL SILICON TRANSISTOR
Category : Discrete Semiconductor Products
Family: Transistors - Bipolar (BJT) - Single
Series: -
In Stock:100000
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Product Introduction:
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Product Details
Series-
PackageBulk
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic8V @ 3.3A, 10A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Power - Max1.75 W
Frequency - Transition2MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak
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