MJD112TF
Manufacturer: Rochester Electronics
Description: POWER BIPOLAR TRANSISTOR
Category : Discrete Semiconductor Products
Family: Transistors - Bipolar (BJT) - Single
Series: -
In Stock:202000
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Product Introduction:
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Product Details
Series-
PackageBulk
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75 W
Frequency - Transition25MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak
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