FCP11N60N
Manufacturer: Sanyo Semiconductor/ON Semiconductor
Description: MOSFET N-CH 600V 10.8A TO220-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: SupreMOS™
In Stock:100000
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Product Introduction:
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Product Details
SeriesSupreMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35.6 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1505 pF @ 100 V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Related Parts for FCP11N60N
AS9120B
ESD S20.20
ISO14001
ISO9001
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