FQD2N60CTM
Manufacturer: Sanyo Semiconductor/ON Semiconductor
Description: MOSFET N-CH 600V 1.9A DPAK
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: QFET®
In Stock:36750
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Product Introduction:
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Product Details
SeriesQFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds235 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 44W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Related Parts for FQD2N60CTM
AS9120B
ESD S20.20
ISO14001
ISO9001
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