IRFL014NPBF
Manufacturer: Rochester Electronics
Description: MOSFET N-CH 55V 1.9A SOT223
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: HEXFET®
In Stock:3000
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Product Introduction:
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Product Details
SeriesHEXFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs160mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds190 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA
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