IPB80P04P4L06ATMA2
Manufacturer: IR (Infineon Technologies)
Description: MOSFET P-CH 40V 80A TO263-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS®-P2
In Stock:100000
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Product Introduction:
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Product Details
SeriesOptiMOS®-P2
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs104 nC @ 10 V
Vgs (Max)+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds6580 pF @ 25 V
FET Feature-
Power Dissipation (Max)88W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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