SISH112DN-T1-GE3
Manufacturer: Vishay / Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
In Stock:5800
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Product Introduction:
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Product Details
SeriesTrenchFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2610 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.5W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH
Related Parts for SISH112DN-T1-GE3
AS9120B
ESD S20.20
ISO14001
ISO9001
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