FDD5670
Manufacturer: Rochester Electronics
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: PowerTrench®
In Stock:50000
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Product Introduction:
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Product Details
SeriesPowerTrench®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C52A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.739 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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