IRF620
Manufacturer: Rochester Electronics
Description: 5.0A 200V 0.800 OHM N-CHANNEL
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: PowerMESH™ II
In Stock:5000
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Product Introduction:
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Product Details
SeriesPowerMESH™ II
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
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