NDP6020P
Manufacturer: Rochester Electronics
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:700000
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Product Introduction:
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Product Details
Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs50mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1.59 pF @ 10 V
FET Feature-
Power Dissipation (Max)60W (Tc)
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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