SI2369BDS-T1-GE3
Manufacturer: Vishay / Siliconix
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
In Stock:1995
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Product Introduction:
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Product Details
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C5.6A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs27mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.5 nC @ 10 V
Vgs (Max)+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds745 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.3W (Ta), 2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3
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