TK100E10N1,S1X
Manufacturer: Toshiba Electronic Devices and Storage Corporation
Description: MOSFET N-CH 100V 100A TO220
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: U-MOSVIII-H
In Stock:2200000
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Product Introduction:
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Product Details
SeriesU-MOSVIII-H
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8800 pF @ 50 V
FET Feature-
Power Dissipation (Max)255W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Related Parts for TK100E10N1,S1X
AS9120B
ESD S20.20
ISO14001
ISO9001
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