SCT3120ALGC11
Manufacturer: ROHM Semiconductor
Description: SICFET N-CH 650V 21A TO247N
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:1500000
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Product Introduction:
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Product Details
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs38 nC @ 18 V
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 500 V
FET Feature-
Power Dissipation (Max)103W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247N
Package / CaseTO-247-3
Related Parts for SCT3120ALGC11
AS9120B
ESD S20.20
ISO14001
ISO9001
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