IPT111N20NFDATMA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 200V 96A 8HSOF
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
In Stock:375700
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Product Introduction:
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Product Details
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11.1mOhm @ 96A, 10V
Vgs(th) (Max) @ Id4V @ 267µA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7000 pF @ 100 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN
Related Parts for IPT111N20NFDATMA1
AS9120B
ESD S20.20
ISO14001
ISO9001
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