SIHB22N60ET1-GE3
Manufacturer: Vishay / Siliconix
Description: MOSFET N-CH 600V 21A TO263
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: E
In Stock:271800
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Product Details
SeriesE
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs86 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1920 pF @ 100 V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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ISO14001
ISO9001
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