2SK4177-DL-1E
Manufacturer: Rochester Electronics
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:3360
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Product Introduction:
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Product Details
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1.5 V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13Ohm @ 1A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs37.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 30 V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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AS9120B
ESD S20.20
ISO14001
ISO9001
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