EPC2019
Manufacturer: EPC
Description: GANFET N-CH 200V 8.5A DIE
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: eGaN®
In Stock:2491
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Product Introduction:
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Product Details
SerieseGaN®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs50mOhm @ 7A, 5V
Vgs(th) (Max) @ Id2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs2.5 nC @ 5 V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 100 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie
Related Parts for EPC2019
AS9120B
ESD S20.20
ISO14001
ISO9001
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