SIS606BDN-T1-GE3
Manufacturer: Vishay / Siliconix
Description: MOSFET N-CH 100V 9.4A/35.3A PPAK
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
In Stock:3150
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Product Introduction:
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Product Details
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C9.4A (Ta), 35.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs17.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1470 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8
Related Parts for SIS606BDN-T1-GE3
AS9120B
ESD S20.20
ISO14001
ISO9001
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