FCP190N65S3
Manufacturer: Rochester Electronics
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: SuperFET® III
In Stock:1650
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Product Introduction:
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Product Details
SeriesSuperFET® III
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1.35 pF @ 400 V
FET Feature-
Power Dissipation (Max)144W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
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