SISH536DN-T1-GE3
Manufacturer: Vishay / Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen V
In Stock:4085
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Product Introduction:
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Product Details
SeriesTrenchFET® Gen V
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C24.7A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.57W (Ta), 26.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH
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ISO14001
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