SCT2750NYTB
Manufacturer: ROHM Semiconductor
Description: SICFET N-CH 1700V 5.9A TO268
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:3360
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Product Introduction:
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Product Details
Series-
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs975mOhm @ 1.7A, 18V
Vgs(th) (Max) @ Id4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 18 V
Vgs (Max)+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds275 pF @ 800 V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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