FQPF2N60C
Manufacturer: Rochester Electronics
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: QFET®
In Stock:3150
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Product Introduction:
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Product Details
SeriesQFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds235 pF @ 25 V
FET Feature-
Power Dissipation (Max)23W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack
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