ISP12DP06NMXTSA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET P-CH 60V 2.8A SOT223-4
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
In Stock:1050
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Product Introduction:
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Product Details
SeriesOptiMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs125mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id4V @ 520µA
Gate Charge (Qg) (Max) @ Vgs20.2 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 30 V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 4.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA
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