FDP2D3N10C
Manufacturer: Rochester Electronics
Description: MOSFET N-CH 100V 222A TO220-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: PowerTrench®
In Stock:18000
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Product Introduction:
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Product Details
SeriesPowerTrench®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C222A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11.18 pF @ 50 V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Related Parts for FDP2D3N10C
AS9120B
ESD S20.20
ISO14001
ISO9001
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