G2R1000MT17D
Manufacturer: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 4A TO247-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: G2R™
In Stock:2000
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Product Introduction:
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Product Details
SeriesG2R™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds139 pF @ 1000 V
FET Feature-
Power Dissipation (Max)53W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Related Parts for G2R1000MT17D
AS9120B
ESD S20.20
ISO14001
ISO9001
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