NTMFS5C604NLT1G
Manufacturer: Rochester Electronics
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:7949
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Product Introduction:
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Product Details
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C38A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8.9 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads
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