RFD12N06RLESM9A
Manufacturer: Sanyo Semiconductor/ON Semiconductor
Description: MOSFET N-CH 60V 18A TO252AA
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: UltraFET™
In Stock:7875
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Product Introduction:
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Product Details
SeriesUltraFET™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds485 pF @ 25 V
FET Feature-
Power Dissipation (Max)49W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Related Parts for RFD12N06RLESM9A
AS9120B
ESD S20.20
ISO14001
ISO9001
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