SIHD2N80E-GE3
Manufacturer: Vishay / Siliconix
Description: MOSFET N-CH 800V 2.8A DPAK
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: E
In Stock:570000
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Product Introduction:
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Product Details
SeriesE
PackageCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.6 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds315 pF @ 100 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252AA)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Related Parts for SIHD2N80E-GE3
AS9120B
ESD S20.20
ISO14001
ISO9001
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