SIR112DP-T1-RE3
Manufacturer: Vishay / Siliconix
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
In Stock:120000
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Product Introduction:
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Product Details
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C37.6A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.96mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs89 nC @ 10 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds4270 pF @ 20 V
FET Feature-
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8
Related Parts for SIR112DP-T1-RE3
AS9120B
ESD S20.20
ISO14001
ISO9001
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