TK6A80E,S4X
Manufacturer: Toshiba Electronic Devices and Storage Corporation
Description: MOSFET N-CH 800V 6A TO220SIS
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: π-MOSVIII
In Stock:52500
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Product Introduction:
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Product Details
Seriesπ-MOSVIII
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 600µA
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 25 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack
Related Parts for TK6A80E,S4X
AS9120B
ESD S20.20
ISO14001
ISO9001
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