FQP6N80C
Manufacturer: Sanyo Semiconductor/ON Semiconductor
Description: MOSFET N-CH 800V 5.5A TO220-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: QFET®
In Stock:3308
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Product Introduction:
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Product Details
SeriesQFET®
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1310 pF @ 25 V
FET Feature-
Power Dissipation (Max)158W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Related Parts for FQP6N80C
AS9120B
ESD S20.20
ISO14001
ISO9001
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