BSO615CGHUMA1
Manufacturer: Rochester Electronics
Description: PFET, 3.1A I(D), 60V, 0.11OHM, 2
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Arrays
Series: SIPMOS®
In Stock:1000000
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Product Details
SeriesSIPMOS®
PackageBulk
Part StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2V @ 20µA, 2V @ 450µA
Gate Charge (Qg) (Max) @ Vgs22.5nC, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds380pF, 460pF @ 25V
Power - Max2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device PackagePG-DSO-8
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