IPG20N06S2L35AATMA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET 2N-CH 55V 2A 8TDSON
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101, OptiMOS™
In Stock:209554
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Product Introduction:
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Product Details
SeriesAutomotive, AEC-Q101, OptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Rds On (Max) @ Id, Vgs35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 25V
Power - Max65W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-10
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