IRF8313TRPBF
Manufacturer: IR (Infineon Technologies)
Description: MOSFET 2N-CH 30V 9.7A 8SO
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Arrays
Series: HEXFET®
In Stock:2100
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Product Introduction:
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Product Details
SeriesHEXFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusNot For New Designs
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.7A
Rds On (Max) @ Id, Vgs15.5mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 15V
Power - Max2W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
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ISO14001
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