SPB08P06P
Manufacturer: IR (Infineon Technologies)
Description: MOSFET P-CH 60V 8.8A TO263-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: SIPMOS®
In Stock:10000
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Product Introduction:
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Product Details
SeriesSIPMOS®
PackageTape & Reel (TR)
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds420 pF @ 25 V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Parts for SPB08P06P
AS9120B
ESD S20.20
ISO14001
ISO9001
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