IRF630NS
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 200V 9.3A D2PAK
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: HEXFET®
In Stock:2000
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Product Introduction:
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Product Details
SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds575 pF @ 25 V
FET Feature-
Power Dissipation (Max)82W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Parts for IRF630NS
AS9120B
ESD S20.20
ISO14001
ISO9001
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