2N6796
Manufacturer: Microsemi
Description: MOSFET N-CH 100V 8A TO39
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:4000
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Product Introduction:
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Product Details
Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs6.34 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-39
Package / CaseTO-205AF Metal Can
Related Parts for 2N6796
AS9120B
ESD S20.20
ISO14001
ISO9001
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