BSC109N10NS3GATMA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 100V 63A TDSON-8-1
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
In Stock:31500
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Product Introduction:
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Product Details
SeriesOptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs10.9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 50 V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN
Related Parts for BSC109N10NS3GATMA1
AS9120B
ESD S20.20
ISO14001
ISO9001
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