IPB180N06S4H1ATMA2
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 60V 180A TO263-7
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, OptiMOS™
In Stock:400000
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Product Introduction:
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Product Details
SeriesAutomotive, AEC-Q101, OptiMOS™
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds21900 pF @ 25 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-3
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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