SCT2450KEC
Manufacturer: ROHM Semiconductor
Description: SICFET N-CH 1200V 10A TO247
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:10000
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Product Introduction:
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Product Details
Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs585mOhm @ 3A, 18V
Vgs(th) (Max) @ Id4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 18 V
Vgs (Max)+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds463 pF @ 800 V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
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AS9120B
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ISO14001
ISO9001
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