IPD65R380E6
Manufacturer: Rochester Electronics
Description: MOSFET N-CH 650V 10.6A TO252-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ E6
In Stock:4805
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Product Introduction:
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Product Details
SeriesCoolMOS™ E6
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 100 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-313
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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