NVMFS5C404NT1G
Manufacturer: Rochester Electronics
Description: POWER FIELD-EFFECT TRANSISTOR
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:150000
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Product Introduction:
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Product Details
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C378A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs0.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8.4 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN
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