FQPF10N20C
Manufacturer: Rochester Electronics
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: QFET®
In Stock:636450
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Product Introduction:
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Product Details
SeriesQFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 25 V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack
Related Parts for FQPF10N20C
AS9120B
ESD S20.20
ISO14001
ISO9001
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