FDV302P
Manufacturer: Rochester Electronics
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:210000
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Product Introduction:
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Product Details
Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Rds On (Max) @ Id, Vgs10Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.31 nC @ 4.5 V
Vgs (Max)-8V
Input Capacitance (Ciss) (Max) @ Vds11 pF @ 10 V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23
Package / CaseTO-236-3, SC-59, SOT-23-3
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