BSP149H6327XTSA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 200V 660MA SOT223-4
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: SIPMOS®
In Stock:840
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Product Introduction:
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Product Details
SeriesSIPMOS®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Rds On (Max) @ Id, Vgs1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 25 V
FET FeatureDepletion Mode
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA
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ISO14001
ISO9001
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