BSS806NEH6327XTSA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 20V 2.3A SOT23-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, HEXFET®
In Stock:18127
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Product Introduction:
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Product Details
SeriesAutomotive, AEC-Q101, HEXFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 2.5V
Rds On (Max) @ Id, Vgs57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id0.75V @ 11µA
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 2.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds529 pF @ 10 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3
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