IPD60N10S4L12ATMA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 100V 60A TO252-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, HEXFET®
In Stock:300000
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Product Introduction:
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Product Details
SeriesAutomotive, AEC-Q101, HEXFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 60A, 10V
Vgs(th) (Max) @ Id2.1V @ 46µA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds3170 pF @ 25 V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-313
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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ESD S20.20
ISO14001
ISO9001
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