IRF820
Manufacturer: Rochester Electronics
Description: 2.5A, 500V, 3.000 OHM, N-CHANNEL
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: PowerMESH™ II
In Stock:5000
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Product Introduction:
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Product Details
SeriesPowerMESH™ II
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds315 pF @ 25 V
FET Feature-
Power Dissipation (Max)80W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
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