NVD5863NLT4G
Manufacturer: Rochester Electronics
Description: 13A, 60V, 0.011OHM, N-CHANNEL,
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: -
In Stock:1250000
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Product Introduction:
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Product Details
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C14.9A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.1mOhm @ 41A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3.85 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 96W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
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