IPP60R299CPXKSA1
Manufacturer: IR (Infineon Technologies)
Description: MOSFET N-CH 650V 11A TO220-3
Category : Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
In Stock:498
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Product Details
SeriesCoolMOS™
PackageTube
Part StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 100 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3
Related Parts for IPP60R299CPXKSA1
AS9120B
ESD S20.20
ISO14001
ISO9001
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